View RF2495_1130547.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

RF2495
0
Typical Applications * UHF Digital and Analog Receivers * Digital Communication Systems * Commercial and Consumer Systems * Portable Battery-Powered Equipment
900MHZ 3V LOW CURRENT LNA/MIXER
* Spread-Spectrum Communication Systems * General Purpose Frequency Conversion Product Description
The RF2495 is a front-end receiver IC chip developed for the handset/portable battery-powered equipment markets. The chip contains an RF 15dB attenuator, an LNA and a passive mixer. By using a state-of-the-art Silicon Bi-CMOS process, the LNA has high dynamic range under low DC operating conditions and the passive mixer requires no DC bias at all. Packaged in the industry-standard MSOP-10 package, the device is well-suited for limited board space applications.
0.192 0.038 0.006 0.008 0.118
0.0197 0.0004
0.118 0.014 TYP
0.004 0.002
6.0 0.0 0.021 0.004
0.006 0.002
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS InGaP/HBT GaAs HBT SiGe HBT GaN HEMT GaAs MESFET
Package Style: MSOP-10
!SiGe Bi-CMOS
Si CMOS
Features * Single Supply 3V Operation * 1.9dB LNA NF * 0dBm Input IP3 * Small MSOP-10 Package * Low Current Drain (11mA maximum) * Very Low Cost
VCC1 LNA IN GND2 GND1 ATTN
1 2 3
Switched Attenuator
Chip Power ON/OFF
10 PD 9 8 7 6 GATE DRAIN SOURCE LNA OUT
4 5
Ordering Information
RF2495 RF2495 PCBA 900MHz 3V Low Current LNA/Mixer Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A4 030220
8-281
RF2495
Absolute Maximum Ratings Parameter
Supply Voltage Input RF Level Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +3.6 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Overall
RF/LO Frequency Range
Specification Min. Typ. Max.
850 to 940 800 to 1000 15.5 1.0 -2.5 +11.0 17.0 4.0 +1.0 +12.5 1.9 13.5
Unit
MHz MHz dB dB dBm dBm dB dB
Condition
T=25C, VCC =3.0V Specifications Usable range High gain state Low gain state High gain state, RF IN=-25dBm Low gain state, RF IN=-15dBm High gain state Low gain state
LNA
Gain Input IP3 Noise Figure Input VSWR Output VSWR
2.2 1.67:1 1.67:1
Mixer
Conversion Gain Input IP3 LO Input Level -6.5 -6.0 +7.5 +10.0 -2 VCC -0.3 -5.5 -5.5 +11.0 +13.0 4.0 >1.6 0 >1.6 0 3.0 2.7 to 3.3 10 <1 dB dB dBm dBm dBm V V V V V V mA uA With LO=+2dBm With LO=+4dBm With LO=+2dBm With LO=+4dBm
Attenuation
ATTN Enable ATTN Disable 0.3 Low gain state High gain state Voltage applied to PD pin Voltage applied to PD pin Specifications Operating limits Chip enabled Chip disabled
Power Down
Chip Enable Chip Disable VCC -0.3
Power Supply
Voltage Current Consumption
12 3.0
8-282
Rev A4 030220
RF2495
Pin 1 Function VCC1 Description
Supply voltage for the LNA, bias circuits, and control logic. External RF bypassing is required. The trace length between the pin and the bypass capacitors should be minimized. The ground side of the bypass capacitors should connect immediately to ground plane. RF Input pin. This pin is internally matched for optimum noise figure from a 50 source. This pin is internally DC-biased and, if connected to a device with DC present, should be blocked with a capacitor suitable for the frequency of operation.
Interface Schematic
2
LNA_IN
VBIAS
LNA IN GND1
3 4 5
GND2 GND1 ATTN
Ground connection. For best performance, keep traces physically short and connect immediately to ground plane. Ground connection for the LNA circuits. For best performance, keep traces physically short and connect immediately to ground plane. Attenuation pin. A logic high reduces LNA gain by 15dB.
See pin 2.
VCC
ATTN
GND2
6 7
LNA OUT SOURCE
LNA Output pin. This pin requires a connection to VCC through an inductor. Connection to source of MOSFET transistor used as mixer. Drain and source are symmetric. Connection to drain of MOSFET transistor used as mixer. Connection to gate of MOSFET transistor used as mixer. Internally DC-biased. Use DC-blocking capacitor. Power control. A logic "low" turns the part off. A logic "high" (>1.6V) turns the part on.
LNA OUT
DRAIN GATE SOURCE
8 9 10
DRAIN GATE PD
See pin 7. See pin 7.
VCC
PD
GND2
ESD
This diode structure is used to provide electrostatic discharge protection to 3kV using the Human body model. The following pins are protected: 1, 3, 5, 9, 10.
VCC
Rev A4 030220
8-283
RF2495
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 P1-3 3 CON3 VCC1 GND ENABLE P2-3 P2-1 P2 1 2 3 CON3 ENABLE C7 10 pF R1 10 VCC1 + C2 4.7 F C4 0.01 F C14 4.7 pF L1 12 nH C3 47 pF C1 22 nF 1 2 3
Switched Attenuator Chip Power ON/OFF
VCC2 GND ATTN
L3 8.2 nH +
50 strip C9 6 pF
J2 LO IN
C12 2.2 nF 10 9 8 7 6 R3 330
2495400A
50 strip
J1 LNA IN
50 strip
L5 68 nH L4 10 nH
J5 IF OUT
C11 10 pF 50 strip C10 5 pF J4 RF IN
4 ATTN 5
C2 2.4 pF L2 10 nH R2 10 C5 47 pF
50 strip
J3 LNA OUT
VCC2
8-284
Rev A4 030220
RF2495
Evaluation Board Layout Board Size 1.108" x 1.281"
Board Thickness 0.031", Board Material FR-4
Rev A4 030220
8-285
RF2495
LNA: Gain versus Frequency Over Temperature
20.0
(VCC=2.78V)
5.0
LNA: IIP3 versus Frequency and P1dB versus Frequency Over Temperature (VCC=2.78V)
4.0 16.0
IIP3 (dBm) and P1dB (dBm)
3.0
Gain (dB)
12.0 -40C High Gain [dB] 25C High Gain [dB] 85C High Gain [dB] -40C Low Gain [dB] 25C Low Gain [dB] 85C Low Gain [dB]
2.0
8.0
1.0
4.0 0.0
-40C IIP3 [dBm] 25C IIP3 [dBm] 85C IIP3 [dBm] -40C P1dBOut [dBm] 25C P1dBOut [dBm] 85C P1dBOut [dBm]
0.0 800.0 825.0 850.0 875.0 900.0 925.0 950.0 975.0 1000.0
-1.0 800.0 825.0 850.0 875.0 900.0 925.0 950.0 975.0 1000.0
Frequency (MHz)
Frequency (MHz)
LNA: Noise Figure versus Frequency Over Temperature
3.0
(VCC=2.78V)
14.0 12.0
Mixer: Conversion Gain versus LO Power, OIP3 versus LO Power Over Temperature
2.5
Conversion Gain (dB) and OIP3 (dB)
10.0 8.0 6.0 4.0 2.0 0.0 -2.0 -4.0 -6.0 -8.0 -40.0C_Conversion Gain [dB] 25.0C_Conversion Gain [dB] 85.0C_Conversion Gain [dB] -40.0C_OIP3 [dBm] 25.0C_OIP3 [dBm] 85.0C_OIP3 [dBm]
Noise Figure (dB)
2.0
1.5 -40C Noise Figure [dB] 25C Noise Figure [dB] 85C Noise Figure [dB] 1.0 800.0 825.0 850.0 875.0 900.0 925.0 950.0 975.0 1000.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
Frequency (MHz)
LO Power (dBm)
VCC=2.78V, Freq=900MHz
11.0 9.0
Mixer: Conversion Gain versus Frequency, OIP3 versus Frequency Over Temperature
Conversion Gain (dB) and OIP3 (dB)
7.0 5.0 3.0 1.0 -1.0 -3.0 -5.0 -7.0 800.0 850.0 900.0 950.0 1000.0 VCC=2.78V, LO=4dBm
-40.0C Conversion Gain [dB] 25.0C Conversion Gain [dB] 85.0C Conversion Gain [dB] -40.0C OIP3 [dBm] 25.0C OIP3 [dBm] 85.0C OIP3 [dBm]
Frequency (MHz)
8-286
Rev A4 030220

▲Up To Search▲

Price & Availability of RF2495

	To Download RF2495 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .